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2SA812 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part No. 2SA812
Description  SOT-23 Plastic-Encapsulate Transistors
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Maker  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/index.asp
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812
TRANSISTOR (PNP)
FEATURES
Complementary to 2SC1623
High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)
High Voltage: Vceo=-50V
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=- 60 V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE
VCE=- 6V, IC= -1mA
90
600
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -10mA
-0.3
V
Base-emitter voltage
VBE
IC=-1mA, VCE=-6V
-0.58
-0.68
V
Transition frequency
fT
VCE=-6V, IC= -10mA
180
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
4.5
pF
CLASSIFICATION OF hFE
Rank
M4
M5
M6
M7
Range
90-180
135-270
200-400
300-600
Marking
M4
M5
M6
M7
Unit : mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
JC T
www.cj-elec.com
1
A,Jun,2014
www.cj-elec.com
C,Oct,2014
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
200
mW
RΘJA
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150




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