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S9418 Datasheet(PDF) 6 Page - Summit Microelectronics, Inc. |
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S9418 Datasheet(HTML) 6 Page - Summit Microelectronics, Inc. |
6 / 10 page 6 S9418 2023 1.5 4/24/99 Symbol Parameter Min Max Unit Test Method VZAP ESD Susceptibility 2000 V MS-883, TM 3015 ILTH Latch-Up 100 mA JEDEC Standard 17 TDR Data Retention 100 Years MS-883, TM 1008 NEND Endurance 1,000,000 Stores MS-883, TM 1033 RELIABILITY CHARACTERISTICS (over recommended operating conditions unless otherwise specified) 2023 PGM T3 1.1 ABSOLUTE MAXIMUM RATINGS VDD to GND ................................................................... -0.5V to +7V Digital Inputs to Gnd ............................................. -0.5V to VDD+0.5V Analog Inputs to ground ........................................ -0.5V to VDD+0.5V Digital Outputs to Gnd ........................................... -0.5V to VDD+0.5V Analog Outputs to Gnd ......................................... -0.5V to VDD+0.5V Temperature Under Bias ........................................... -55 °C to +125°C Storage Temperature ................................................ -65 °C to +150°C Lead Soldering (10 Sec Max) ................................................... 300 °C Stresses listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. DC ELECTRICAL CHARACTERISTICS (over recommended operating conditions unless otherwise specified) Symbol Parameter Conditions Min Max Units IDD Supply Current CS = VIL 1.8 mA during store, note 1 ISB Standby Supply Current CS = VIH 800 µA IIH Input Leakage Current VIN = VDD 10 µA IIL Input Leakage Current VIN =0V -10 µA VIH High Level Input Voltage 2 VDD V VIL Low Level Input Voltage 0 0.8 V VOH High Level Output Voltage IOH = -400 µAVDD-0.3 V VOL Low Level Output IOL=1mA, VDD = +5V 0.4 V Voltage IOL= 0.4mA, VDD = +2.7V 0.4 V Note 1: IDD is the supply current drawn while the EEPROM is being updated 2023 PGM T4 1.2 Condition Min Max Temperature -40 °C +85 °C VDD +2.7V +5.5V RECOMMENDED OPERATING CONDITIONS 2023 PGM T2 1.1 |
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