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SUB85N06-05 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUB85N06-05 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SUP/SUB85N06-05 Vishay Siliconix New Product www.vishay.com 2-2 Document Number: 71113 S-20556—Rev. C, 22-Apr-02 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 60 Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 48 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C 50 mA DSS VDS = 48 V, VGS = 0 V, TJ = 175_C 250 m On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 0.0044 0.0052 a VGS = 4.5 V, ID = 20 A 0.0059 0.0072 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.0085 W VGS = 10 V, ID = 30 A, TJ = 175_C 0.010 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S Dynamicb Input Capacitance Ciss 7560 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1050 pF Reverse Transfer Capacitance Crss 570 Total Gate Chargec Qg 155 220 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 85 A 28 nC Gate-Drain Chargec Qgd DS GS D 44 Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = 30 V, RL = 0.4 W 90 130 Turn-Off Delay Timec td(off) VDD = 30 V, RL = 0.4 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W 95 140 ns Fall Timec tf 105 150 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 75 Pulsed Current ISM 240 A Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.1 1.4 V Reverse Recovery Time trr 50 85 ns Peak Reverse Recovery Current IRM(REC) IF = 85 A, di/dt = 100 A/ms 2.7 5 A Reverse Recovery Charge Qrr 0.067 0.21 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
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