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SP8K1 Datasheet(PDF) 2 Page - Rohm

Part # SP8K1
Description  Switching (30V, 5.0A)
Download  4 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

SP8K1 Datasheet(HTML) 2 Page - Rohm

  SP8K1 Datasheet HTML 1Page - Rohm SP8K1 Datasheet HTML 2Page - Rohm SP8K1 Datasheet HTML 3Page - Rohm SP8K1 Datasheet HTML 4Page - Rohm  
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SP8K1
Transistors
2/3
Electrical characteristics (Ta=25
°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
V(BR) DSS
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current
VGS (th)
Gate threshold voltage
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Ciss
Reverse transfer capacitance
Coss
Turn-on delay time
Crss
Rise time
td (on)
Turn-off delay time
tr
Fall time
td (off)
Total gate charge
tf
Gate-source charge
Qg
Gate-drain charge
Qgs
Qgd
∗Pulsed
10
µAVGS=20V, VDS=0V
VDD 15V
30
−−
VID
=1mA, VGS=0V
−−
1
µAVDS=30V, VGS=0V
1.0
2.5
V
VDS
=10V, ID=1mA
36
51
ID
=5.0A, VGS=10V
52
73
m
Ω ID=5.0A, VGS=4.5V
58
82
ID
=5.0A, VGS=4V
3.0
−−
SID
=5.0A, VDS=10V
230
pF
VDS
=10V
80
50
pF
VGS
=0V
6
pF
f
=1MHz
VGS
=10V
RL
=6Ω
RGS
=10Ω
8
ns
22
ns
5
ns
3.9
ns
1.1
5.5
nC
1.4
nC
VGS
=5V
−−
nC
ID
=5.0A
ID
=2.5A, VDD 15V
Body diode characteristics (Source-Drain Characteristics) (Ta=25
°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Forward voltage
VSD
−−
1.2
V
IS
=6.4A, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
∗Pulsed


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