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CNY17 Datasheet(PDF) 2 Page - Vishay Siliconix |
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CNY17 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page CNY17 www.vishay.com Vishay Semiconductors Rev. 2.1, 08-Jan-14 2 Document Number: 83606 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Fig. 1 - Total Power Dissipation vs. Ambient Temperature ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 2.5 A LED power dissipation at 25 °C Pdiss 100 mW OUTPUT Collector emitter breakdown voltage BVCEO 70 V Emitter base breakdown voltage BVEBO 7V Collector current IC 50 mA tp/T = 0.5, tp ≤ 10 ms IC 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector t = 1 min VISO 5000 VRMS Storage temperature Tstg -55 to +150 °C Operating temperature Tamb -55 to +110 °C Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C Total power dissipation Pdiss 250 mW ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.39 1.65 V Breakdown voltage IR = 10 μA VBR 6V Reverse current VR = 6 V IR 0.01 10 μA Capacitance VR = 0 V, f = 1 MHz CO 25 pF Thermal resistance Rth 750 K/W 0 50 100 150 200 250 300 0 20 40 60 80 100 120 T amb - Ambient Temperature (°C) Coupled device Phototransistor IR-diode |
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