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CNY64AGRST Datasheet(PDF) 3 Page - Vishay Siliconix |
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CNY64AGRST Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors Rev. 1.1, 26-Jun-14 3 Document Number: 82387 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5 CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 5 mA CNY64ST CTR 50 300 % CNY65ST CTR 50 300 % CNY64AYST CTR 50 150 % CNY65AYST CTR 50 150 % CNY64ABST CTR 80 240 % CNY65ABST CTR 80 240 % CNY64AGRST CTR 100 300 % CNY65AGRST CTR 100 300 % SAFETY AND INSULATION PARAMETERS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 2.8 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Vpd 2.2 kV Insulation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Forward current Isi 120 mA Power dissipation Pso 250 mW Rated impulse voltage VIOTM 12 kV Safety temperature Tsi 150 °C Tracking resistance (comparative tracking index) Insulation group IVa CTI 475 Minimum external tracking (creepage distance) Measured from input pins to output pins CNY64ST ≥ 9.5 mm CNY65ST ≥ 14 mm 0 25 50 75 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 Tamb (°C) 22292 P so (mW) I si (mA) t 13930 t1, t2 = 1 s to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM Vpd VIOWM VIORM 0 t1 ttest tTr = 60 s tstres t3 t4 t2 |
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