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H11AA1-X006 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # H11AA1-X006
Description  Optocoupler, Phototransistor Output, AC Input with Base Connection
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

H11AA1-X006 Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83608
2
Rev. 1.7, 23-Feb-11
H11AA1
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, with Base Connection
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Forward continuous current
IF
± 60
mA
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Power dissipation
Pdiss
200
mW
Derate linearly from 25 °C
2.6
mW/°C
Collector emitter breakdown voltage
BVCEO
30
V
Emitter base breakdown voltage
BVEBO
5V
Collector base breakdown voltage
BVCBO
70
V
COUPLER
Isolation test voltage (RMS)
Between emitter and detector,
referred to standard climate
23 °C/50% RH, DIN 50014
VISO
5300
VRMS
Creepage distance
 7mm
Clearance distance
 7mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
CTI
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
 1012
VIO = 500 V, Tamb = 100 °C
RIO
 1011
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Lead soldering time at 260 °C
Tsld
10
s
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 10 mA
VF
1.2
1.5
V
OUTPUT
Collector emitter breakdown voltage
IC = 1 mA
BVCEO
30
V
Emitter base breakdown voltage
IE = 100 μA
BVEBO
5V
Collector base breakdown voltage
IC = 100 μA
BVCBO
70
V
Collector emitter leakage current
VCE = 10 V
ICEO
5100
nA
COUPLER
Collector emitter saturation voltage
IF = ± 10 mA, IC = 0.5 mA
VCEsat
0.4
V
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
DC current transfer ratio
IF = ± 10 mA, VCE = 10 V
CTRDC
20
%
Symmetry
(CTR at + 10 mA)/(CTR at - 10 mA)
0.33
1
3


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