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SFH620A-3X001 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH620A-3X001 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page SFH620A, SFH6206 www.vishay.com Vishay Semiconductors Rev. 2.3, 31-Aug-15 2 Document Number: 83675 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Still air, coupler soldered to PCB or base. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current IF ± 60 mA Surge forward current tp ≤ 10 μs IFSM ± 2.5 A Power dissipation Pdiss 100 mW OUTPUT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA tp ≤ 1 μs IC 100 mA Power dissipation Pdiss 150 mW COUPLER Total power dissipation Ptot 250 mW Storage temperature range Tstg -55 to +150 °C Ambient temperature range Tamb -55 to +100 °C Junction temperature Tj 100 °C Soldering temperature (1) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = ± 60 mA VF 1.25 1.65 V Capacitance VR = 0 V, f = 1 MHz CO 50 pF Thermal resistance Rthja 750 K/W OUTPUT Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF Thermal resistance Rthja 500 °C/W COUPLER Collector emitter saturation voltage IF = ± 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Coupling capacitance CC 0.2 pF Collector emitter leakage current VCE = 10 V SFH620A-1 ICEO 250 nA SFH6206-1 ICEO 250 nA SFH620A-2 ICEO 250 nA SFH6206-2 ICEO 250 nA SFH620A-3 ICEO 5 100 nA SFH6206-3 ICEO 5 100 nA |
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