2SD1499 datasheet(1/4 Pages) JIANGSU

Part #	2SD1499

Description	TO-252-2L Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-2

Plastic-Encapsulate Transistors

2SD1499

TRANSISTOR (NPN)

FEATURES

Extremely Satisfactory Linearity of the Forward Current

Transfer Ratio hFE

Wide Safe Operation Area

High Transition Frequency fT

Full-pack Package which can be Installed to the Heat Sink with

One Screw.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

5

A

PC

Collector Power Dissipation

1.25

W

TJ

Junction temperature

150

℃

Tstg

Storage Temperature

℃

ELECTRICAL

CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

100

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICEO

VCE=50V,IB=0

50

µA

Collector cut-off current

ICBO

VCB=100V,IE=0

50

µA

Emitter cut-off current

IEBO

VEB=3V,IC=0

50

µA

hFE(1)

VCE=5V,IC=20mA

20

hFE(2)

VCE=5V,IC=1A

60

200

DC current gain

hFE(3)

VCE=5V,IC=3A

20

Collector-emitter saturation voltage

VCE(sat)

IC=3A,IB=0.3A

2

V

Base-emitter voltage

VBE

VCE=5V,IC=3A

1.8

V

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

90

pF

Transition frequency

fT

VCE = 5 V, IC = 0.5 A, f = 1 MHz

20

MHz

CLASSIFICATION OF hFE2

Rank

Q

P

Range

60-120

100-200

www.cj-elec.com

1

B,Mar,2016

TO-252-2L

1.BASE

2.COLLECTOR

3.EMITTER

-55-150

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