TPC8106-H datasheet(3/7 Pages) TOSHIBA

Part #	TPC8106-H

Description	SILICON P CHANNEL MOS TYPE

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8106-H

2002-02-06

3

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

µA

Drain cut−off current

IDSS

VDS = −30 V, VGS = 0 V

—

10

µA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

—

Drain−source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−15

—

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

—

−2.0

V

RDS (ON)

VGS = −4 V, ID = −5 A

—

24

30

Drain−source ON resistance

RDS (ON)

VGS = −10 V, ID = −5 A

—

14

20

mΩ

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −5 A

8.3

16.6

—

S

Input capacitance

Ciss

—

2160

—

Reverse transfer capacitance

Crss

—

530

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

720

—

pF

Rise time

tr

—

12

—

Turn−on time

ton

—

20

—

Fall time

tf

—

100

—

Switching time

Turn−off time

toff

—

250

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

52

—

Gate−source charge

Qgs

—

38

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V, ID = −10 A

—

14

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

−40

A

Forward voltage (diode)

VDSF

IDR = −10 A, VGS = 0 V

—

1.2

V

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