A1015 datasheet(1/4 Pages) JIANGSU

Part #	A1015

Description	TO-92 Plastic-Encapsulate Transistors

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

Logo

1 / 4 page

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

F,Dec,2015

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

A1015 TRANSISTOR (PNP)

FEATURES

Power dissipation

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-150

mA

PD

Collector Power Dissipation

400

mW

Tj

Junction Temperature

1

50

℃

Tstg

Storage Temperature

-55

~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA, IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -0.1mA, IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -50V,IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE= -50V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE

VCE= -6V, IC= -2mA

70

400

Collector-emitter saturation voltage

VCE(sat)

IC= -100mA, IB= -10mA

-0.3

V

Base-emitter saturation voltage

VBE(sat)

IC= -100mA, IB= -10mA

-1.1

V

Transition frequency

fT

VCE= -10 V, IC= -1mA

f =30MHz

80

MHz

Collector utput apacitance

Cob

VCB=-10V,IE=0,f=1MH

z

7

pF

Noise igure

NF

VCE= -6 V, IC= -0.1mA,

f =1

kHz,RG=10kΩ

6

dB

CLASSIFICATIONOFhFE

Rank

O

Y

GR

Range

70-140

120-240

200-400

TO-92

1.EMITTER

2.COLLECTOR

3.BASE

RθJA

Thermal Resistance

from Junction to

Ambient

312

℃/W

Similar Part No. - A1015

Manufacturer	Part #	Datasheet	Description
Panasonic Semiconductor	A1015	48Kb / 2P	Photo Interrupters
MAKO SEMICONDUCTOR CO.,...	A1015	123Kb / 2P	High voltage and high current
Toshiba Semiconductor	A1015	156Kb / 2P	PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
GUANGDONG HOTTECH INDUS...	A1015	216Kb / 2P	Plastic-Encapsulate Transistors
Unisonic Technologies	A1015	62Kb / 2P	PNP EPITAXIAL SILICON TRANSISTOR

More results

Similar Description - A1015

Manufacturer	Part #	Datasheet	Description
Tiger Electronic Co.,Lt...	MCR100-6	132Kb / 2P	TO-92 Plastic-Encapsulate Transistors (TO-92)
Avic Technology	AV42	148Kb / 2P	TO-92 Plastic-Encapsulate Transistors
	AV1015	423Kb / 3P	TO-92 Plastic-Encapsulate Transistors
	AV1815	404Kb / 3P	TO-92 Plastic-Encapsulate Transistors
	AV4401	478Kb / 3P	TO-92 Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	2SC2001	802Kb / 5P	TO-92 Plastic-Encapsulate Transistors
Jiangsu High diode Semi...	S9014-TO-92	2Mb / 4P	TO-92 Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	2SD1513	422Kb / 3P	TO-92 Plastic-Encapsulate Transistors
	2SD1835	1Mb / 4P	TO-92 Plastic-Encapsulate Transistors
	BC237	1Mb / 4P	TO-92 Plastic-Encapsulate Transistors
	BC327	534Kb / 4P	TO-92 Plastic-Encapsulate Transistors

More results

A1015 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

A1015 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Similar Part No. - A1015

Similar Description - A1015

Html Pages

1 2 3 4

Datasheet Download

Link URL