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VBE60-06A Datasheet(PDF) 1 Page - IXYS Corporation

Part # VBE60-06A
Description  Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

VBE60-06A Datasheet(HTML) 1 Page - IXYS Corporation

  VBE60-06A Datasheet HTML 1Page - IXYS Corporation VBE60-06A Datasheet HTML 2Page - IXYS Corporation  
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© 2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
VBE 60-06A
Advanced Technical Information
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Features
• International standard package miniBLOC
• Isolation voltage 2500 V~
• single Phase Rectifier Bridge with FREDs
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM-values
• Soft recovery behaviour
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test:
① for resistive load at bridge output.
② Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
I
dAV
= 60 A
V
RRM = 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
VBE 60-06A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
dAV
rect., d = 0.5; T
C = 90°C
60
A
I
FSM
T
VJ = 45°C; VR = 0;
250
A
I2t
t
p = 10 ms (50 Hz), sine
315
A2s
E
AS
T
VJ = 25°C; non-repetitive
0.2
mJ
I
AS = 1.3 A; L = 180 µH
I
AR
V
A = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-40...+150
°C
T
VJM
150
°C
T
stg
-40...+150
°C
P
tot
T
C = 25°C
140
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL ≤ 1 mA
M
d
mounting torque (M4)
1.1-1.5/9-13
Nm/lb.in.
terminal connection torque (M4)
1.1-1.5/9-13
Nm/lb.in.
Weight
typical
30
g
Symbol
Conditions
Characteristic max. Values
I
R
V
R
= V
RRM;TVJ =
25°C
0.15
mA
V
R
= V
RRM;TVJ = 125°C
1
mA
V
F
I
F = 30 A;
T
VJ = 125°C
1.26
V
T
VJ =
25°C
1.54
V
R
thJC
1.15
K/W
R
thCH
typ.
0.1
K/W
t
rr
I
F = 1 A; -di/dt = 200 A/µs;
typ.
35
ns
V
R = 30 V; TVJ = 25°C
I
RM
V
R = 100 V;
I
F = 50 A; -diF/dt = 100 A/µs
typ.
5.5
A
T
VJ = 100°C
+
~
~
~
miniBLOC, SOT-227 B
~
+
Data according to IEC 60747 and per diode unless otherwise specified


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