IL420, IL4208

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 11-Jun-13

2

Document Number: 83629

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

60

mA

Surge current

2.5

A

Power dissipation

100

mW

Derate from 25 °C

1.33

mW/°C

OUTPUT

Peak off-state voltage

IL420

600

V

IL4208

800

V

RMS on-state current

300

mA

Single cycle surge current

3A

Power dissipation

500

mW

Derate from 25 °C

6.6

mW/°C

COUPLER

Isolation test voltage



between emitter and detector

t = 1 s

5300

Isolation resistance





Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

max.

 10 s dip soldering

 0.5 mm from case bottom

260

°C

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.16

1.35

V

Reverse current

0.1

10

μA

Input capacitance

40

pF

Thermal resistance, junction to ambient

750

°C/W

OUTPUT

Off-state current

10

100

μA

On-state voltage

1.7

3

V

Surge (non-repetitive), on-state current

f = 50 Hz

3A

Holding current

65

500

μA

Latching current

500

μA

LED trigger current

12

mA

Trigger current temperature gradient

I

714

μA/°C

Critical rate of rise off-state voltage

10 000

V/μs

5000

V/μs

Critical rate of rise of voltage



at current commutation

8V/μs

7V/μs

Critical rate of rise of on-state current



commutation

12

A/ms

Thermal resistance, junction to ambient

150

°C/W