FCX591 datasheet(1/3 Pages) JIANGSU

Part #	FCX591

Description	SOT-89-3L Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

FCX591

TRANSISTOR (PNP)

FEATURES

Power dissipation

MARKING:P1

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-1

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65

~150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA , IE=0

-80

V

Collector-emitter breakdown voltage

V(BR)CEO*

IC= -10mA , IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-60 V , IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4 V , IC=0

-0.1

μA

Collector- Emitter cut-off current

ICES

VCES=-60 V, IE=0

-0.1

μA

DC current gain

hFE*

VCE=-5V, IC= -1mA

VCE=-5V, IC= -500mA

VCE=-5V, IC= -1A

VCE=-5V, IC= -2A

100

80

15

300

Collector-emitter saturation voltage

VCE(sat) *

IC=-500 mA, IB= -50mA

IC=-1A, IB= -100mA

-0.3

-0.6

V

Base-emitter saturation voltage

VBE(sat) *

IC=-1A, IB= -100mA

-1.2

V

Base-emitter voltage

VBE*

VCE=-5V, IC= -1A

-1

V

Transition frequency

f T

VCE= -10V, IC=- 50mA

f =100MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V, f=1MHz

10

pF

*Pulse width=300s. Duty cycle 2%

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

℃

www.cj-elec.com

1

D,Nov,2015

C

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