KTA968A datasheet(1/2 Pages) JIANGSU

Part #	KTA968A

Description	TO-220-3L Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO-220-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate Transistors

KTA968A

TRANSISTOR (PNP)

FEATURES

High Transition Frequency

High Voltage Applications

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100µA,IE=0

-180

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-180

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-160V,IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-1

μA

DC current gain

hFE

VCE=-5V, IC=-100mA

70

240

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-1.5

V

Base-emitter voltage

VBE

VCE=-5V, IC=-500mA

-1

V

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

30

pF

Transition frequency

fT

VCE=-10V,IC=-100mA

100

MHz

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

70-140

120-240

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-180

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-1.5

A

PC

Collector Power Dissipation

2

W

RθJA

Thermal Resistance From Junction To Ambient

63

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

B,Nov,2014

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