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AIC1821BCV Datasheet(PDF) 5 Page - Analog Intergrations Corporation |
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AIC1821BCV Datasheet(HTML) 5 Page - Analog Intergrations Corporation |
5 / 7 page AIC1821 ONE-CELL LITHIUM-ION BATTERY PROTECTION IC SPEC NO: DS-1821-P1 06/07/00 ANALOG INTEGRATIONS CORPORATION www.analog.com.tw 4F, 9 Industry E. 9th Road, Science-based IndustrialPark,Hsinchu,Taiwan, R.O.C. TEL: (8863)577-2500 FAX:(8863)577-2510 5 n APPLICATION INFORMATIONS l THE OPERATION Overcharge Protection When the voltage of the battery cell exceeds the overcharge protection voltage (VOCP) beyond the overcharge delay time (TOC) period, charging is inhibited by the turning-off of the charge control MOSFET M2. The overcharge delay time is fixed to 100mS by IC internal circuit. The overcharge condition is released in two cases: 1. The voltage of the battery cell becomes lower than the overcharge release voltage (VOCR or VOCP- VHYS) through self-discharge. 2. The voltage of the battery cell falls below the overcharge protection voltage (VOCP) and a load is connected. When the battery voltage is above VOCP, the overcharge condition is never released even a load is connected to the pack. Overdischarge Protection When the voltage of the battery cell goes below the overdischarge protection voltage (VODP) beyond the overdischarge delay time (TOD) period, discharging is inhibited by the turning-off of the discharge control MOSFET M1. The overdischarge delay time defaults to 100mS. Inhibition of discharging is immediately released when the voltage of the battery cell becomes higher than overdischarge release voltage (VODR) through charging. Overcurrent Protection In normal mode, the AIC1821 continuously monitors the discharge current by sensing the voltage of CS pin. If the voltage of CS pin exceeds the overcurrent protection voltage (VOIP) beyond the overcurrent delay time (TOI) period, the overcurrent protection circuit operates and discharging is inhibited by the turning-off of the discharge control MOSFET M1. The overcurrent condition returns to the normal mode when the load is released and the impedance between the BATT+ and BATT- terminals is 20M Ω or higher. The AIC1821 is provided with the two overcurrent detection levels (0.2V and 1V) and the two overcurrent delay time (TOI1 and TOI2) corresponding to each overcurrent detection level. Load Detection after Overcharge The load detection function after overcharge is implemented by detecting the CS pin voltage. Once a load is connected to the battery pack after overcharge, discharge current flows through the parasitic diode of MOSFET M2 and there is a diode voltage drop between CS and GND. Load is determined to be connected to the pack if the CS pin voltage is above load detection threshold voltage (VLD). Power-Down after Overdischarge When overdischarge occurs, the AIC1821 will go into power-down mode, turning off all the timing generation and detection circuitry to reduce the quiescent current to 0.4 µA (V CC=2.3V). At the same time, the CS pin is pull-high to VCC through a high resistance resistor. Charge Detection after Overdischarge When overdischarge occurs, the discharge control MOSFET M1 turns off and discharging is inhibited. However, charging is still permitted through the parasitic diode of M1. Once the charger is connected to the battery pack, the AIC1821 immediately turns on all the timing generation and detection circuitry. Charging is determined to be in progress if the voltage between CS and GND is below charge detection threshold voltage (VCH). l DESIGN GUIDE Selection of External Control MOSFETs Because the overcurrent protection voltage is preset, the threshold current for overcurrent detection is determined by the turn-on resistance of the discharge control MOSFET M1. The turn-on resistance of the external control MOSFETs can be determined by the equation: RON=VOIP/ (2 x IT) (IT is the overcurrent threshold current). For example, if the overcurrent threshold current IT is designed to be 3A, the turn-on resistance of the external control MOSFETs must be 33m Ω. Users should be aware that turn-on resistance of the MOSFET changes with temperature variation due to heat dissipation. It changes with the voltage between gate and source as well. (Turn-on resistance of a MOSFET increases as the voltage between gate and source decreases). Once the turn-on resistance of the external MOSFET changes, the overcurrent threshold current will change accordingly. Suppressing the Ripple and Disturbance from Charger To suppress the ripple and disturbance from charger, connecting R1, C1 to VCC pin is recommended. Protection at CS pin R2 is used for latch-up protection when charger is |
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