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NB7L216MNEVB Datasheet(PDF) 5 Page - ON Semiconductor

Part # NB7L216MNEVB
Description  2.5 V / 3.3 V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NB7L216MNEVB Datasheet(HTML) 5 Page - ON Semiconductor

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NB7L216
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5
Table 5. AC CHARACTERISTICS (VCC = 2.375 V to 3.465 V, VEE = 0 V; (Note 1))
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VOUTPP Output Voltage Amplitude (@ VINPPmin)
fin ≤ 7.0 GHz
fin ≤ 8.5 Ghz (See Figure 4)
275
100
380
250
275
100
380
250
275
100
380
250
mV
fDATA
Maximum Operating Data Rate
10
12
10
12
10
12
Gb/s
|S21|
Power Gain DC to 7 GHz
35
35
35
dB
|S11|
Input Return Loss @ 7 GHz
−10
−10
−10
dB
|S22|
Output Return Loss @ 7 GHz
−5
−5
−5
dB
|S12|
Reverse Isolation (Differential Configuration)
−25
−25
−25
dB
IIP3
Input Third Order Intercept
0
0
0
dBm
tPLH,
tPHL
Propagation Delay to Output Differential @ 1 GHz
60
120
180
60
120
180
60
120
180
ps
tSKEW
Duty Cycle Skew (Note 1)
Device to Device Skew (Note 6)
2
5
10
20
2
5
10
20
2
5
10
20
ps
tJITTER
RMS Random Clock Jitter
fin v 8.5 Ghz (Note 4)
Peak-to-Peak Data Dependent Jitter (Note 5)
fDATA = 3.5 Gb/s
fDATA = 5.0 Gb/s
fDATA = 10 Gb/s
fDATA = 12 Gb/s
0.1
1
3
4
4
0.5
7
9
9
9
0.1
1
3
4
4
0.5
7
9
9
9
0.1
1
3
4
4
0.5
7
9
9
9
ps
VINPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 3 and Figure 12)
20
2500
20
2500
20
2500
mV
tr
tf
Output Rise/Fall Times @ 0.5 Ghz (20% − 80%)
Q, Q
30
45
30
45
30
45
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values
are applied individually under normal operating conditions and not valid simultaneously.
1. Measured by forcing VINPPmin from a 50% duty cycle clock source. All loading with an external RL = 50 W to VTT =VCC − 2.0 V. Input edge
rates 40 ps (20%− 80%).
2. Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw− and Tpw+ @ 1 GHz.
3. VINPP (MAX) cannot exceed VCC − VEE. Input voltage swing is a single-ended measurement operating in differential mode.
4. Additive RMS jitter with 50% duty cycle clock signal.
5. Additive peak-to-peak data dependent jitter with input NRZ data at PRBS 223−1.
6. Device to device skew is measured between outputs under identical transition @ 1 GHz.
0
50
100
150
200
250
300
350
400
450
500
246789
10
11
12
0
Figure 4. Output Voltage Amplitude (VOUTPP) versus
Input Clock Frequency (fIN) and Temperature
(VINPP = 400 mV, VCC = 3.3 V and VEE = 0 V)
25°C
−40°C
85°C
INPUT CLOCK FREQUENCY (GHz)
0
50
100
150
200
250
300
350
400
450
500
24
6
789
10
11
12
0
−40°C
25°C
85°C
INPUT CLOCK FREQUENCY (GHz)
Figure 5. Output Voltage Amplitude (VOUTPP) versus
Input Clock Frequency (fIN) and Temperature
(VINPP = 20 mV, VCC = 3.3 V and VEE = 0 V)


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