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D3UB40 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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D3UB40 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente D3UB05~ D3UB100 Voltage 50V ~ 1000V 3.0Amp Glass Passivated Bridge Rectifiers 29-Jun-2015 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Io : 3A VRRM : 50~1000V Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameter Symbol D3UB 05 D3UB 10 D3UB 20 D3UB 40 D3UB 60 D3UB 80 D3UB 100 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Without heatsink TA=29°C 1.2 Average Rectified Output Current @ 60Hz sine wave, R-load With heatsink Tc =140°C IO 3.0 A Surge(Non- repetitive)Forward Current @ 60HZ sine wave, 1 cycle, TJ=25°C IFSM 90 A Current Squared Time 1 I 2t 33 A 2S Dielectric Strength@ Terminals to case ,AC 1 minute VDIS 2 KV Mounting Torque@ Recommend torque : 5kg.cm Tor 8 Kg.cm Peak Forward Voltage@ IFM=1.5A, Pulse measurement, Rating of per diode VFM 1.05 V Peak Reverse Current@ VRM=VRRM , Pulse measurement, Rating of per diode IRRM 10 µA Without heatsink RθJA 55 Thermal Resistance With heatsink RθJC 1.5 °C / W Junction and Storage temperature range TJ,TSTG -55~+150 °C Notes: 1. 1ms≤t<8.3ms TJ=25°C ,Rating of per diode Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 13.3 14.3 G 13.1 13.5 B 10.3 11.3 H 3.7 3.9 C 6.4 7.4 J 2.0 2.2 D 4.5 5.5 K 0.4 0.6 E 1.05 1.45 L 2.6 3.6 F 0.60 0.85 M 3.1 3.4 D3K |
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