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S4101 Datasheet(PDF) 2 Page - Rohm

Part # S4101
Description  N-channel SiC power MOSFET bare die
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

S4101 Datasheet(HTML) 2 Page - Rohm

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Datasheet
S4101
Example of acceptable Vgs waveform
1200
Typ.
Unit
Max.
Min.
Values
--
V
Electrical characteristics (T
a = 25°C)
Parameter
Conditions
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
Symbol
nA
Tj = 150°C
2
1
Tj = 25°C
VGS = 4V, VDS = 0V
-
-
-
10
-
VGS = 22V, VDS = 0V
-
100
-
Gate - Source leakage current
IGSS
Gate threshold voltage
VDS = 10V, ID = 10mA
VGS (th)
Zero gate voltage
drain current
IDSS
A
Gate - Source leakage current
IGSS
-
100
nA
VDS = 1200V, VGS = 0V
Static drain - source
on - state resistance
RDS(on)
*3
-
Gate input resistance
RG
f = 1MHz, open drain
-
7
m
-60
-
Tj = 125°C
-
V
Tj = 25°C
40
50
2.7
-
5.6
VGS = 18V, ID = 20A
2/11
2017.08 - Rev.B


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