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RGTV00TS65D Datasheet(PDF) 4 Page - Rohm

Part # RGTV00TS65D
Description  650V 50A Field Stop Trench IGBT
Download  13 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

RGTV00TS65D Datasheet(HTML) 4 Page - Rohm

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© 2017 ROHM Co., Ltd. All rights reserved.
Datasheet
RGTV00TS65D
IGBT Electrical Characteristics
(at Tj = 25°C unless otherwise specified)
VCC = 400V
diF/dt = 200A/μs
VCC = 400V
diF/dt = 200A/μs
μC
Tj = 25°C
Diode Peak Reverse Recovery
Current
Irr
IF = 50A
-
15.2
-
A
Diode Reverse Recovery
Charge
Qrr
-
0.64
-
μJ
μC
Tj = 175°C
Diode Reverse Recovery Energy
Err
-
104.8
-
μJ
Diode Reverse Recovery
Charge
Qrr
-
1.62
-
-ns
Diode Reverse Recovery Energy
Err
-
29.5
-
Diode Reverse Recovery Time
trr
-
177
ns
Diode Peak Reverse Recovery
Current
Irr
IF = 50A
-
11.2
-
A
Diode Reverse Recovery Time
trr
-
102
-
V
Tj = 25°C
-
1.45
1.9
Tj = 175°C
-
1.55
-
Diode Forward Voltage
VF
IF = 50A
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
4/11
2017.05 - Rev.A


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