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MJD31C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MJD31C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page MJD31C 3A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 21-Sep-2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Excellent DC Current Gain Characteristics PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1.25 W Junction and Storage Temperature Range TJ ,TSTG 150 , -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 100 - - V IC=1mA, IE=0 Collector-emitter breakdown voltage VCEO(SUS) 100 - - V IC=30mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector cut-off current ICES - - 20 µ A VCE=100V, VEB=0 Collector cut-off current ICEO - - 50 µ A VCE=60V, IB=0 Emitter cut-off current IEBO - - 1 mA VEB=5V, IC=0 DC current gain hFE 25 - - VCE=4V, IC=1A 10 - 50 VCE=4V, IC=3A Collector-emitter saturation voltage VCE(sat) - - 1.2 V IC=3A, IB=375mA Base-emitter voltage VBE(ON) - - 1.8 V VCE=4V, IC=3A Transition frequency fT 3 - - MHz VCE=10V, IC=500mA, fT=1KHz Note: 1.Pulse Test: PW ≦300µS, Duty Cycle≦2%. A C D N O P G E F H K J M B D-Pack (TO-252) REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.8 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 |
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