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B120LW Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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B120LW Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
1 / 3 page 1 Dimensions in inches and (millimeters) Features ■ ■ Mechanical data ■ Maximum ratings and electrical characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. OC Outline ■ optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • Low profile surface mounted application in order to Suffix "G" indicates Halogen-free part, ex.B120LWG. SOD-123 • Case : Molded plastic, SOD-123 • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Weight : 0.0004 ounce, 0.010 gram • Epoxy:UL94-V0 rated flame retardant B120LW THRU B140LW 1A Surface Mount Schottky Barrier Rectifiers I O I FSM I R C J T STG Forward rectified current Forward surge current Reverse current Thermal resistance Storage temperature Parameter 8.3ms single half sine-wave superimposed on rate load (JEDEC method) O V = V T = 25 C R RRM A O V = V T = 100 C R RRM A Conditions Symbol MIN. TYP. MAX. UNIT -55 +150 130 20 1.0 1.0 5.5 A A mA OC/W OC 42 R θJA Junction to ambient Diode junction capacitance pF f=1MHz and applied 4V DC reverse voltage Marking code 0.04 9 (1 .25 ) 0.04 1 (1 .05 ) 0.110 (2 .80 ) 0.10 2 (2 .60 ) 0.15 2 (3 .85 ) 0.14 0 (3 .55 ) Operating temperature O T ( C) J -55 ~ +100 Max. forward voltage O @1A, T = 25 C A V (V) F Max. DC blocking voltage V (V) R Max. RMS voltage V (V) RMS 28 14 Max. repetitive peak reverse voltage V (V) RRM 40 20 Marking code B140LW B120LW Symbol B4 B2 40 20 0.43 0.45 Document ID : DS-12K44 Issued Date : 2010/05/05 Revised Date : 2012/05/31 Revision : C |
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