TSHF5410_11 datasheet(2/5 Pages) VISHAY

Part #	TSHF5410

Description	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 5 page

TSHF5410

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 24-Aug-11

2

Document Number: 81303

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

0

20

40

60

80

100

120

140

160

180

0

1020

3040506070

8090100

21211

Tamb - Ambient Temperature (°C)

RthJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

Tamb - Ambient Temperature (°C)

21212

RthJA = 230 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.4

1.6

V

IF = 1 A, tp = 100 μs

VF

2.3

V

Temperature coefficient of VF

IF = 1 mA

TKVF

- 1.8

mV/K

Reverse current

VR = 5 V

IR

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

125

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

45

70

135

mW/sr

IF = 1 A, tp = 100 μs

Ie

700

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φe

50

mW

Temperature coefficient of

φe

IF = 100 mA

TK

φe

- 0.35

%/K

Angle of half intensity

ϕ

± 22

deg

Peak wavelength

IF = 100 mA

λp

890

nm

Spectral bandwidth

IF = 100 mA

Δλ

40

nm

Temperature coefficient of

λp

IF = 100 mA

TK

λp

0.25

nm/K

Rise time

IF = 100 mA

tr

30

ns

Fall time

IF = 100 mA

tf

30

ns

Cut-off frequency

IDC = 70 mA, IAC = 30 mA pp

fc

12

MHz

Virtual source diameter

d2.1

mm

Similar Part No. - TSHF5410_11

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TSHF5410	110Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero Rev. 1.2, 04-Sep-08
	TSHF5410	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.3, 25-Jun-09
	TSHF5410	109Kb / 5P	High Speed Infrared Emitting Diode, 890 nm,GaAlAs Double Hetero 01-Jan-2022
	TSHF5410	108Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2023

More results

Similar Description - TSHF5410_11

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TSHF5410	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.3, 25-Jun-09
	TSHF6410	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSSF4500	96Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.7, 24-Aug-11
	VSMF3710	143Kb / 6P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2022
	VSMF3710	149Kb / 7P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.7, 03-Nov-09
	TSHF6410	113Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2023
	VSMF3710	132Kb / 6P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 2.0, 02-Nov-15
	TSHF6210	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHF5210	109Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHF5410	109Kb / 5P	High Speed Infrared Emitting Diode, 890 nm,GaAlAs Double Hetero 01-Jan-2022

More results

TSHF5410 Datasheet(PDF) 2 Page - Vishay Siliconix

TSHF5410 Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - TSHF5410_11

Similar Description - TSHF5410_11

Html Pages

1 2 3 4 5

Datasheet Download

Link URL