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TSHG6400 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSHG6400 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page TSHG6400 www.vishay.com Vishay Semiconductors Rev. 1.2, 23-Aug-11 1 Document Number: 84636 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero DESCRIPTION TSHG6400 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 18 MHz • Good spectral matching with CMOS cameras • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination). • High speed IR data transmission. Note • Test conditions see table “Basic Characteristics“ Note • MOQ: minimum order quantity 94 8389 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSHG6400 70 ± 22 850 20 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHG6400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1A Power dissipation PV 180 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W |
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