Case:TO-277B Molded Plastic "Green" Molding Compound

Excellent High Temperature Stability

Lead Free: For RoHS/Lead Free Version

High Thermal Reliability

Ultra Low Power Loss, High Efficiency

High Foward Surge Capability

High Junction Temperture

Bypass Diodes for Solar Panels

Features

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Mechanical Data

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Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

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Polarity: Cathode Band

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Mounting Position: Any

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Marking: Type Number

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

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Patented Super Barrier Rectifier Technology

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Top View

Bottom View

LEFT PIN

RIGHT PIN

Note: Pins Left & Right must

be electrically connected

at the printed circuit board.

BOTTOMSIDE

HEAT SINK

Z ibo Seno Electronic Engineering Co., Ltd.

SB08T80L-SB08T200L

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Schottky Barrier Chip

8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

1 of 3

www.senocn.com

SB08T80L-SB08T200L

08T120L

08T80L

SB

-55 to +150

-55 to +150

56

DC

At Rated DC Blocking Voltage T =100

Peak Reverse Curent

T =25

Junctionto Ambient

Typical Thermal Resistance

Average Rectified Output Current (Note1)

Unit

V

A

mA

℃

℃

℃ /W

storage temperature range

Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.

2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm.

Operating junction temperature range

℃

℃

0.3

15

Non-Repetitive Peak Forward Surge8.3ms

Single Half Sine-Wave Superimposed on rated

8.0

Parameter

Symbol

80

DC blocking voltage

V

load(JEDEC Method)

Working Peak Reverse Voltage

Peak Repetitive Reverse Voltage

V

V

A

150

RMS Rectified Voltage

(Note2)

A

A

SB

SB

08T150L

SB

08T200L

SB

200

140

T =25

@IF=3A

℃

A

T =25

@IF=8A

℃

A

Typ

Max.

-

Forward Voltage Drop

T =25

@IF=1A

℃

A

0.47

0.52

0.67

0.60

A

t

2

I

93.4

08T100L

100

70

120

84

150

105

80

15

0.85

0.60

Typ

Max.

-

0.47

0.52

0.67

0.60

0.60

0.85

0.85