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STA-6033 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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STA-6033 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 8 page The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com 1 EDS-103643 Rev B Preliminary Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal com- bination of low cost and high reliability. This product is specifically designed as a final stage for 802.11a equipment in the 4.9 - 5.9 GHz band. It can run from a 3.0V to 3.6V supply. Optimized on-chip impedance matching circuitry provides a 50 Ω nominal RF input imped- ance. A single external output matching circuit covers the entire 4.9-5.9GHz band. The external output match allows for load line optimization for other applications or opti- mized performance over narrower bands. It is designed as a drop in replacement for similar parts in its class. Key Specifications Symbol Parameters: Test Conditions, App circuit page 4 Z0 = 50Ω, VCC = Vpc = 3.3V, Icq = 165mA, TBP = 30ºC Unit Min. Typ. Max. fO Frequency of Operation MHz 4900 5900 P1dB Output Power at 1dB Compression – 4.9 GHz dBm 26.5 Output Power at 1dB Compression – 5.875 GHz 24.0 25.5 S21 Gain at 4.9 GHz dB 28.0 30.0 32.0 Gain at 5.875 GHz 23.6 25.6 27.6 Pout Output power at 3% EVM 802.11a 54Mb/s - 5.15GHz dBm 18 Output Power at 3% EVM 802.11a 54Mb/s - 5.875GHz 18 IM3 Third Order Intermod at Pout=15dBm per tone - 5.875GHz dBc -38 -34 NF Noise Figure at 5.875 GHz dB 5.7 IRL Worst Case Input Return Loss 4.9-5.875GHz dB 11 15 ORL Worst Case Output Return Loss 4.9-5.875GHz 8 12 Vdet Range Output Voltage Range for Pout=7dBm to 23dBm V 0.8 to 1.5 Icq Vcc Quiescent Current mA 140 165 190 IVPC Power Up Control Current,Vpc=3.3V ( IVPC1 + IVPC2 + IVPC3)mA 1.5 Rth, j-l Thermal Resistance (junction - lead) ºC/W 28 Functional Block Diagram STA-6033 4.9 – 5.9 GHz 3.3V Power Amplifier Product Features Applications • 802.11a 54Mb/s Class AB Performance Pout = 18dBm @ 3% EVM, 3.3V, 210mA • High Gain = 27dB • Output Return Loss < -12dB for Linear Tune • On-chip Output Power Detector • Simultaneous 4.9- 5.9GHz Broadband • Pin Compatible with Microsemi LX5506 • Robust - Survives RF Input Power = +20dBm • Power up/down control < 1µs • 802.11a WLAN, OFDM • General purpose 5.8GHz ISM Band • 802.16 WiMax, Fixed Wireless, UNII Product Description RFIN RFOUT Vcc Pow er Detector Vout Activ e Bias Activ e Bias Activ e Bias Pow er Up/Dow n Control 16 pin 3mm x 3mm QFN |
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