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STA-6033 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # STA-6033
Description  Product Description
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The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-103643 Rev B
Preliminary
Sirenza Microdevices’ STA-6033 is a high efficiency class
AB Heterojunction Bipolar Transistor (HBT) amplifier
housed in a low-cost surface-mountable plastic package.
This HBT amplifier is made with InGaP on GaAs device
technology and fabricated with MOCVD for an ideal com-
bination of low cost and high reliability.
This product is specifically designed as a final stage for
802.11a equipment in the 4.9 - 5.9 GHz band. It can run
from a 3.0V to 3.6V supply. Optimized on-chip impedance
matching circuitry provides a 50
Ω nominal RF input imped-
ance. A single external output matching circuit covers the
entire 4.9-5.9GHz band. The external output match allows
for load line optimization for other applications or opti-
mized performance over narrower bands. It is designed as
a drop in replacement for similar parts in its class.
Key Specifications
Symbol
Parameters: Test Conditions, App circuit page 4
Z0 = 50Ω, VCC = Vpc = 3.3V, Icq = 165mA, TBP = 30ºC
Unit
Min.
Typ.
Max.
fO
Frequency of Operation
MHz
4900
5900
P1dB
Output Power at 1dB Compression – 4.9 GHz
dBm
26.5
Output Power at 1dB Compression – 5.875 GHz
24.0
25.5
S21
Gain at 4.9 GHz
dB
28.0
30.0
32.0
Gain at 5.875 GHz
23.6
25.6
27.6
Pout
Output power at 3% EVM 802.11a 54Mb/s - 5.15GHz
dBm
18
Output Power at 3% EVM 802.11a 54Mb/s - 5.875GHz
18
IM3
Third Order Intermod at Pout=15dBm per tone - 5.875GHz
dBc
-38
-34
NF
Noise Figure at 5.875 GHz
dB
5.7
IRL
Worst Case Input Return Loss 4.9-5.875GHz
dB
11
15
ORL
Worst Case Output Return Loss 4.9-5.875GHz
8
12
Vdet Range
Output Voltage Range for Pout=7dBm to 23dBm
V
0.8 to 1.5
Icq
Vcc Quiescent Current
mA
140
165
190
IVPC
Power Up Control Current,Vpc=3.3V ( IVPC1 + IVPC2 + IVPC3)mA
1.5
Rth, j-l
Thermal Resistance (junction - lead)
ºC/W
28
Functional Block Diagram
STA-6033
4.9 – 5.9 GHz 3.3V Power Amplifier
Product Features
Applications
802.11a 54Mb/s Class AB Performance
Pout = 18dBm @ 3% EVM, 3.3V, 210mA
High Gain = 27dB
Output Return Loss < -12dB for Linear Tune
On-chip Output Power Detector
Simultaneous 4.9- 5.9GHz Broadband
Pin Compatible with Microsemi LX5506
Robust - Survives RF Input Power = +20dBm
Power up/down control < 1µs
802.11a WLAN, OFDM
General purpose 5.8GHz ISM Band
802.16 WiMax, Fixed Wireless, UNII
Product Description
RFIN
RFOUT
Vcc
Pow er Detector
Vout
Activ e
Bias
Activ e
Bias
Activ e
Bias
Pow er
Up/Dow n
Control
16 pin 3mm x 3mm QFN


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