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72173 Datasheet(PDF) 1 Page - Vishay Siliconix |
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72173 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Backlight Inverter D DC/DC Converter − 4-Cell Battery Si7501DN Vishay Siliconix Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com 1 Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) P-Channel −30 0.051 @ VGS = −10 V −6.4 P-Channel −30 0.075 @ VGS = −6 V −5.3 N Channel 30 0.035 @ VGS = 10 V 7.7 N-Channel 30 0.050 @ VGS = 4.5 V 6.5 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View G2 S2 S1 G1 D Ordering Information: Si7501DN-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) P-Channel N-Channel Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS −30 30 V Gate-Source Voltage VGS "25 "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −6.4 −4.5 7.7 5.4 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID −5.1 −3.6 4.7 4.3 A Pulsed Drain Current IDM −25 25 A Continuous Source Current (Diode Conduction)a IS −2.6 −1.3 2.6 1.3 Maximum Power Dissipationa TA = 25_C PD 3.1 1.6 3.1 1.6 W Maximum Power Dissipationa TA = 70_C PD 3 1.0 2 1.0 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 32 40 Maximum Junction-to-Ambienta Steady State RthJA 65 81 _C/W Maximum Junction-to-Foot (Case) Steady State RthJC 5 6.3 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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