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CSD87503Q3ET Datasheet(PDF) 1 Page - Texas Instruments |
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CSD87503Q3ET Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page  Gate 1 PIN 1 Gate 2 PIN 3 Common Source Pin 2 Common Source Pin 4 Drain 2 Pins 5, 6 Drain 1 Pins 7, 8 VG1, VG2 - Gate Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 D007 TC = 25°C, I D1D2 = 6 A TC = 125°C, I D1D2 = 6 A Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD87503Q3E SLPS661 – SEPTEMBER 2017 CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs 1 1 Features 1 • Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection • Load Switch 3 Description The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications. Top View Circuit Image Product Summary TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 13.4 nC Qgd Gate Charge Gate-to-Drain 5.8 nC RDD(on) Drain-to-Drain On-Resistance VGS = 4.5 V 17.3 m Ω VGS = 10 V 13.5 VGS(th) Threshold Voltage 1.7 V Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD87503Q3E 2500 13-Inch Reel SON 3.30-mm × 3.30-mm Plastic Package Tape and Reel CSD87503Q3ET 250 7-Inch Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V ID1, D2 Continuous Drain-to-Drain Current (Package Limited) 10 A IDS Continuous Drain-to-Source Current (Package Limited) 1.5 A ID1, D2M Pulsed Drain-to-Drain Current,(1) 89 A PD Power Dissipation(2) 2.6 W PD Power Dissipation, TC = 25°C 15.6 W TJ , Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Max RθJC = 8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. (2) Typical RθJA = 50°C/W when mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB. RDD(on) vs VGS |
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