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BLF548 Datasheet(PDF) 11 Page - NXP Semiconductors |
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BLF548 Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 15 page 2003 Sep 26 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 Fig.13 Input impedance as a function of frequency (series components); typical values per section. Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). handbook, halfpage 0 1 −1 −2 −3 −4 50 150 250 350 450 550 f (MHz) Zi (Ω) ri xi MRA528 Fig.14 Load impedance as a function of frequency (series components); typical values per section. Class-B operation; VDS =28V; IDQ = 160 mA (per section); PL = 150 W (total device). handbook, halfpage 0 1 2 3 4 5 6 50 150 250 350 450 550 f (MHz) MRA530 ZL (Ω) RL XL Fig.15 Definition of MOS impedance. handbook, halfpage MBA379 Zi ZL Fig.16 Power gain as a function of frequency; typical values per section. Class-B operation; VDS =28V; IDQ = 160 mA (per section); PL = 150 W (total device). handbook, halfpage 0 10 15 20 25 30 50 150 250 350 450 550 5 f (MHz) Gp (dB) MRA526 |
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