Electronic Components Datasheet Search |
|
BS616LV2016EC Datasheet(PDF) 3 Page - Brilliance Semiconductor |
|
BS616LV2016EC Datasheet(HTML) 3 Page - Brilliance Semiconductor |
3 / 9 page Revision 1.1 Jan. 2004 3 R0201-BS616LV2016 SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 0.1 1.0 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns tR Operation Recovery Time See Retention Waveform TRC (2) -- -- ns SYMBOL PARAMETER CONDITIONS MAX. UNIT CIN Input Capacitance VIN=0V 6 pF CDQ Input/Output Capacitance VI/O=0V 8 pF RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C2.4V ~ 5.5V Industrial -40 O C to +85 O C2.4V ~ 5.5V 1. Typical characteristics are at TA = 25oC. 2. Fmax = 1/t RC. 3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 4.IccsB1_Max. is 3uA/ 10uA at Vcc=3V/ 5V and TA=70oC. 5. Icc_Max. is 30mA(@3V) / 62mA(@5V) under 55ns operation. DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC ) 1. Vcc = 1.5V, TA = + 25OC 2.t RC = Read Cycle Time 3. IccDR_MAX. is 0.7uA at TA=70oC. ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not 100% tested. DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC ) SYMBOL PARAMETER RATING UNITS V TERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V T BIAS Temperature Under Bias -40 to +85 O C T STG Storage Temperature -60 to +150 O C P T Power Dissipation 1.0 W I OUT DC Output Current 20 mA BSI BS616LV2016 (3) PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS Vcc =3.0V VIL Guaranteed Input Low Voltage (3) Vcc =5.0V -0.5 -- 0.8 V Vcc =3.0V 2.0 VIH Guaranteed Input High Voltage (3) Vcc =5.0V 2.2 -- Vcc+0.3 V IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc -- -- 1 uA ILO Output Leakage Current Vcc = Max,CE = VIH or OE = VIH, VI/O = 0V to Vcc -- -- 1 uA Vcc =3.0V VOL Output Low Voltage Vcc = Max, IOL = 2.0mA Vcc =5.0V -- -- 0.4 V Vcc =3.0V VOH Output High Voltage Vcc = Min, IOH = -1.0mA Vcc =5.0V 2.4 -- -- V Vcc =3V 70ns 25 ICC (5) Operating Power Supply Current CE = VIL, IDQ = 0mA, F = Fmax (2) Vcc =5V 70ns -- -- 55 mA Vcc =3.0V 0.5 ICCSB Standby Current-TTL CE=VIH IDQ = 0mA Vcc =5.0V -- -- 1.0 mA Vcc =3.0V 0.3 5 ICCSB1 (4) Standby Current-CMOS CE≧Vcc-0.2V, VIN≧Vcc-0.2V or VIN≦0.2V Vcc =5.0V -- 1.0 30 uA |
Similar Part No. - BS616LV2016EC |
|
Similar Description - BS616LV2016EC |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |