BSS8402DW datasheet(3/5 Pages) DIODES

Part #	BSS8402DW

Description	COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DS30380 Rev. 4 - 2

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BSS8402DW

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0

0.2

0.4

0.6

0.8

1.0

01

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 On-Region Characteristics

V= 10V

GS

9.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

2.1V

5.5V

10V

5.0V

2.1V

0

1

2

3

4

5

00.2

I , DRAIN CURRENT (A)

D

Fig. 2 On-Resistance vs Drain Current

V

= 5.0V

GS

T= 25

°C

j

V

= 10V

GS

6

7

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

-55

-30

-5

20

45

70

95

120

145

T , JUNCTION TEMPERATURE (

°C)

j

Fig. 3 On-Resistance vs Junction Temperature

V

= 10V,

GS

I = 200mA

D

0

V

, GATE TO SOURCE VOLTAGE (V)

GS

Fig. 4 On-Resistance vs. Gate-Source Voltage

I= 50mA

D

I = 500mA

D

1

2

3

4

5

6

0

2

4

6

8

10

1214

1618

0

2

1

4

3

00.2

0.4

0.6

0.8

1

I , DRAIN CURRENT (A)

D

Fig.5 Typical Transfer Characteristics

6

5

8

7

10

9

V= 10V

DS

T = -55°C

A

T = +25°C

A

T = +125°C

A

T = +75°C

A

0

50

100

150

200

250

0

25

50

75

100

125

150

175

200

T , AMBIENT TEMPERATURE (

°C)

A

Fig. 6 Max Power Dissipation vs.

Ambient Temperature

N-CHANNEL - 2N7002 SECTION

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