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BUK9Y19-55B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK9Y19-55B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page Philips Semiconductors BUK9Y19-55B N-channel TrenchMOS™ logic level FET Product data Rev. 01 — 28 May 2004 3 of 12 9397 750 13188 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. VGS ≥ 5V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03na19 0 40 80 120 0 50 100 150 200 Tmb (°C) Pder (%) 03nl99 0 10 20 30 40 50 0 50 100 150 200 Tmb (°C) ID (A) P der P tot P tot 25 C ° () ----------------------- 100% × = 03nm00 1 10 102 103 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µs 100 µs |
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