Philips Semiconductors

BUK9Y19-55B

N-channel TrenchMOS™ logic level FET

Product data

Rev. 01 — 28 May 2004

3 of 12

9397 750 13188

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Continuous drain current as a function of

mounting base temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03na19

0

40

80

120

0

50

100

150

200

Tmb (°C)

Pder

(%)

03nl99

0

10

20

30

40

50

0

50

100

150

200

Tmb (°C)

ID

(A)

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

03nm00

1

10

102

103

1

10

102

VDS (V)

ID

(A)

DC

100 ms

10 ms

Limit RDSon = VDS / ID

1 ms

tp = 10 µs

100

µs