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BS616LV2016DCP55 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616LV2016DCP55 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
1 / 9 page Revision 1.1 Jan. 2004 1 R0201-BS616LV2016 Very Low Power/Voltage CMOS SRAM 128K X 16 bit • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 29mA (@55ns) operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 0.3uA(Typ.) CMOS standby current Vcc = 5.0V C-grade: 60mA (@55ns) operating current I -grade: 62mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I -grade: 55mA (@70ns) operating current 1.0uA(Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible The BS616LV2016 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V /25oC and maximum access time of 55ns at 3.0V/ 85oC. Easy memory expansion is provided by active LOW chip enable (CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2016 is available in DICE form , JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package. DESCRIPTION FEATURES BLOCK DIAGRAM PRODUCT FAMILY PIN CONFIGURATIONS Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. BS616LV2016 SPEED ( ns ) STANDBY ( ICCSB1, Max ) Operating ( ICC, Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc=3.0V Vcc=3.0V PKG TYPE BS616LV2016DC DICE BS616LV2016EC TSOP2-44 BS616LV2016AC +0 O C to +70 O C 2.4V ~5.5V 55/70 3.0uA 53mA BGA-48-0608 BS616LV2016DI DICE BS616LV2016EI TSOP2-44 BS616LV2016AI -40 O C to +85 O C 2.4V ~ 5.5V 55/70 5.0uA 25mA BGA-48-0608 BSI Row Decoder Memory Array 1024 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Buffer Input Control Gnd Vcc OE WE CE DQ15 DQ0 A16 A5 A6 A7 A15 A13 16 16 16 16 14 128 2048 1024 20 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB G H F E D C B A 12345 6 D15 D14 VSS D9 D8 LB VCC N.C. A8 A9 D13 A12 A14 D12 D11 D10 A5 UB OE A3 A0 A11 A10 A13 A15 WE D5 A16 A7 A6 D4 D3 D1 D7 D6 D2 A4 A1 A2 D0 N.C. VSS VCC N.C. CE N.C. N.C. N.C. • I/O Configuration x8/x16 selectable by LB and UB pin 24mA 55mA 70ns 70ns POWER DISSIPATION 55ns: 3.0~5.5V 70ns: 2.7~5.5V • Easy expansion with CE and OE options A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A16 A15 A14 A13 A12 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 BS616LV2016EC BS616LV2016EI • Data retention supply voltage as low as 1.5V • Fully static operation Vcc=5.0V Vcc=5.0V 10uA 30uA |
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