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INA180A1IDBVT Datasheet(PDF) 5 Page - Texas Instruments

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Part # INA180A1IDBVT
Description  INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifier
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

INA180A1IDBVT Datasheet(HTML) 5 Page - Texas Instruments

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INA180, INA2180
www.ti.com
SBOS741A – APRIL 2017 – REVISED AUGUST 2017
Product Folder Links: INA180 INA2180
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3)
Input voltage at any pin can exceed the voltage shown if the current at that pin is limited to 5 mA.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage, VS
6
V
Analog inputs, IN+, IN– (2)
Differential (VIN+) – (VIN–)
–26
26
V
Common-mode(3)
GND – 0.3
26
Output voltage
GND – 0.3
VS + 0.3
V
Maximum output current, IOUT
8
mA
Operating free-air temperature, TA
–55
150
°C
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±3000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
7.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VCM
Common-mode input voltage (IN+ and IN–)
–0.2
12
26
V
VS
Operating supply voltage
2.7
5
5.5
V
TA
Operating free-air temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC (1)
INA180
INA2180
(PREVIEW)
UNIT
DBV (SOT-23)
DGK (VSSOP)
6 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
197.1
TBD
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
95.8
TBD
°C/W
RθJB
Junction-to-board thermal resistance
53.1
TBD
°C/W
ψJT
Junction-to-top characterization parameter
23.4
TBD
°C/W
ψJB
Junction-to-board characterization parameter
52.7
TBD
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
TBD
°C/W


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