TSKS5400S

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 03-Sep-13

1

Document Number: 81074

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Infrared Emitting Diode, 950 nm, GaAs

DESCRIPTION

The TSKS5400S is an infrared, 950 nm emitting diode in

GaAs technology with high radiant power, molded in a clear

plastic package.

FEATURES

• Package type: leaded

• Package form: side view lens

• Dimensions (L x W x H in mm): 5 x 2.65 x 5

• Peak wavelength:

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

ϕ = ± 30°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matched with detector TEKS5400

• Material categorization: For definitions of compliance

APPLICATIONS

• Photointerrupters

• Transmissive sensors, gap sensors

• Reflective sensors

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

14354

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

TSKS5400S

4.5

± 30

950

800

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSKS5400S

Bulk

MOQ: 2000 pcs, 2000 pcs/bulk

Side view lens

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

6V

Forward current

100

mA

Surge forward current

≤ 100 μs

2A

Power dissipation

170

mW

Junction temperature

100

°C

Operating temperature range

- 25 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm, soldered on PCB

270

K/W