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EC9288NNMHR Datasheet(PDF) 4 Page - E-CMOS Corporation |
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EC9288NNMHR Datasheet(HTML) 4 Page - E-CMOS Corporation |
4 / 12 page E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 12 4G18N-Rev.F001 5V 6A 1.2MHz Synchronous Boost Converter EC9288 Symbol Parameter Rating Unit VOUT Output and IC Supply Voltage (VOUT to GND) -0.3 ~ 7 V VBAT Converter Supply Voltage (VBAT to GND) -0.3 ~ 7 V VSW SW to GND Voltage >30ns -0.3 ~ 7 V <30ns -0.3 ~ 9 V EN and FB to GND Voltage -0.3 ~ 7 V PGND to GND -0.3 ~+0.3 V TJ Maximum Junction Temperature 150 ℃ C TSTG Storage Temperature -65 ~ 150 ℃ C TSDR Maximum Lead Soldering Temperature (10 Seconds) 260 ℃ Absolute Maximum Ratings Note1: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Characteristics θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. Recommended Operating Conditions(Note 3) Symbol Parameter Rating Unit VOUT Output and IC Supply Voltage (VOUT to GND) 2.7 ~5.5 V VBAT Converter Supply Voltage (VBAT to GND) 1.8 ~ VOUT V VSW SW to GND Voltage >30ns -0.3 ~ VOUT +0.3 V <30ns -3 ~ VOUT +3 V LBI, SYNC, EN, LBO and FB to GND Voltage 0 ~ VOUT V TJ Junction Temperature -40 ~ 125 ℃ C TA Ambient Temperature -40 ~ 85 ℃ ℃ Note 3 : Refer to the typical application circuit Symbol Parameter Typical Value Unit θJA Junction-to-Ambient Resistance in free air (Note 2) 50 θJC Junction-to-Case Resistance 20 |
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