Symbol

EGF1A EGF1B EGF1D EGF1G EGF1J EGF1K EGF1M

Unit

1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE

Characteristic

-65 to +175

°C

50

75

nS

35

70

140

280

420

560

800

V

50

100

200

400

600

800

1000

V

1.0

1.4

1.7

V

EGF1A – EGF1M

Features

!

Ideally Suited for Automatic Assembly

B

!

Low Forward Voltage Drop, High Efficiency

!

Surge Overload Rating to 30A Peak

D

!

Low Power Loss

A

!

Ultra-Fast Recovery Time

F

!

Plastic Case Material has UL Flammability

Classification Rating 94V-O

C

H

G

E

Mechanical Data

!

Case: SMA/DO-214AC, Molded Plastic

!

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

!

Polarity: Cathode Band or Cathode Notch

!

Marking: Type Number

!

Weight: 0.064 grams (approx.)

!

Lead Free: For RoHS / Lead Free Version

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

30

A

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

10

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

15

pF

Typical Thermal Resistance (Note 3)

30

°C/W

Operating and Storage Temperature Range

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

SMA/DO-214AC

Dim

Min

Max

A

2.50

2.90

B

4.00

4.60

C

1.20

1.60

D

0.152

0.305

E

4.80

5.28

F

2.00

2.44

G

0.051

0.203

H

0.76

1.52

All Dimensions in mm

1 of 2

EGF1A – EGF1M

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

Alldatasheet