EGP20G datasheet(2/2 Pages) ZSELEC

Part #	EGP20G

Description	2.0A GLASS PASSIVATED ULTRAFAST DIODE

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Manufacturer	ZSELEC [Zibo Seno Electronic Engineering Co.,Ltd]

Direct Link	http://www.senocn.com/en/index.html

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0

0.5

1.0

1.5

2.0

2.5

25

50

75

100

125

150

175

200

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Forward Current Derating Curve

A

°

Single phase half-wave

60 Hz resistive or inductive load

0.01

1.0

2.0

10

0.6

0.8

1.0

1.2

1.4

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

F

T = 25 C

j

°

Pulse width = 300 s

µ

0

20

40

60

1

10

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Peak Forward Surge Current

50V DC

Approx

50

NI (Non-inductive)

Ω

10

NI

Ω

1.0

NI

Ω

Oscilloscope

(Note 1)

Pulse

Generator

(Note 2)

Device

Under

Test

t

rr

Set time base for 5/10ns/cm

+0.5A

0A

-0.25A

-1.0A

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.

2. Rise Time = 10ns max. Input Impedance = 50 .

Ω

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

(+)

(-)

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

EGP20J-EGP20M

EGP20A – EGP20M

EGP20A-EGP20F

EGP20G

1

10

100

1

10

100

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

R

T = 25 C

f = 1.0MHz

j

°

EGP20A-EGP20G

EGP20J-EGP20M

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