IRLI3615

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in

commercial-industrial applications. The moulding compound used provides a

high isolation capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100 micron mica barrier

with standard TO-220 product. The Fullpak is mounted to a heatsink using a

single clip or by a single screw fixing.

S

D

G

Parameter

Max.

Units

14

…

9.8

A

Pulsed Drain Current



56

Power Dissipation

45

W

Linear Derating Factor

0.30

W/°C

Gate-to-Source Voltage

±16

V

Single Pulse Avalanche Energy

‚

340

mJ

Avalanche Current



8.4

A

Repetitive Avalanche Energy



4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

3.3

Junction-to-Ambient

–––

65

Thermal Resistance

…

Description

01/30/02

www.irf.com

1

TO-220 FULLPAK

°C/W

PD - 94390