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HER504G Datasheet(PDF) 2 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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HER504G Datasheet(HTML) 2 Page - Zibo Seno Electronic Engineering Co.,Ltd |
2 / 2 page 0.01 0.1 1.0 10 100 0.6 1.0 1.4 1.8 T = 25 C j ° Pulse width = 300 s 2% duty cycle µ V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F HER501G-HER504G 10 100 200 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 8.3ms single half sine-wave 50V DC Approx 50 NI (Non-inductive) Ω 10 NI Ω 1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test t rr Set time base for 5/10ns/cm +0.5A 0A -0.25A -1.0A Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 1 10 100 1 10 100 V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R HER506 - HER508 HER501 - HER505 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com HER501G – HER508G HER501G – HER508G 0 2 4 6 8 025 50 75 100 125 150 175 T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve A ° Single phase half wave Resistive or Inductive load HER505G HER506G-HER508G Alldatasheet |
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