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LH28F800BGBTL12 Datasheet(PDF) 11 Page - Sharp Corporation

Part # LH28F800BGBTL12
Description  8 M-bit (512 kB x 16) SmartVoltage Flash Memories
Download  43 Pages
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH28F800BGBTL12 Datasheet(HTML) 11 Page - Sharp Corporation

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LH28F800BG-L/BGH-L (FOR TSOP, CSP)
- 11 -
COMMAND
BUS CYCLES
NOTE
FIRST BUS CYCLE
SECOND BUS CYCLE
REQ
D.
Oper (NOTE 1) Addr (NOTE 2) Data (NOTE 3) Oper (NOTE 1) Addr (NOTE 2) Data (NOTE 3)
Read Array/Reset
1
Write
X
FFH
Read Identifier Codes
≥ 2
4
Write
X
90H
Read
IA
ID
Read Status Register
2
Write
X
70H
Read
X
SRD
Clear Status Register
1
Write
X
50H
Block Erase
2
5
Write
BA
20H
Write
BA
D0H
Word Write
2
5, 6
Write
WA
40H or 10H
Write
WA
WD
Block Erase and
1
5
Write
X
B0H
Word Write Suspend
Block Erase and
1
5
Write
X
D0H
Word Write Resume
Table 3
Command Definitions (NOTE 7)
NOTES :
1.
Bus operations are defined in Table 2.
2.
X = Any valid address within the device.
IA = Identifier code address : see Fig. 2.
BA = Address within the block being erased.
WA = Address of memory location to be written.
3.
SRD = Data read from status register. See Table 6 for a
description of the status register bits.
WD = Data to be written at location WA. Data is latched
on the rising edge of WE# or CE# (whichever
goes high first).
ID = Data read from identifier codes.
4.
Following the Read Identifier Codes command, read
operations access manufacture and device codes. See
Section 4.2 for read identifier code data.
5.
If the block is boot block, WP# must be at VIH or RP#
must be at VHH to enable block erase or word write
operations. Attempts to issue a block erase or word write
to a boot block while WP# is VIH or RP# is VIH.
6.
Either 40H or 10H is recognized by the WSM as the
word write setup.
7.
Commands other than those shown above are reserved
by SHARP for future device implementations and should
not be used.


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