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RABS1 Datasheet(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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RABS1 Datasheet(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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1 / 2 page  250 500 nS FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER RABS Case: SOPA-4, ABS, Molded Plastic RABS05 - RABS10 Characteristic RABS05 – RABS10 High Surge Current Capability Glass Passivated Die Construction Designed for Surface Mount Application MIL-STD-202, Method 208 C 0.8A Features ! ! Low Forward Voltage Drop ! High Current Capability ! - + H ! ~ ~ D E ! Plastic Material – UL Flammability 94V-O A L Mechanical Data J ! ! MIL-STD-202, Method 208 ! Polarity: As Marked on Case ! Mounting Position: Any ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad. 2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. ABS Dim Min Max A 4.80 5.30 B 4.20 4.60 C 0.15 0.25 D —0.20 E G 0.30 0.70 H 0.90 1.10 J K L All Dimensions in mm 6.00 6.80 1 of 2 ! Lead Free: For RoHS / Lead Free Version Terminals: Plated Leads Solderable per K B G —1.50 1.22 1.72 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current (Note 1) @TA = 40°C Average Rectified Output Current (Note 2) @TA = 40°C IO A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A I2t Rating for Fusing (t < 8.3ms) I2t5.0 A2s Forward Voltage per element @IF = 0.8A VFM 1.3 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 5.0 500 µA Typical Junction Capacitance per leg (Note 3) Cj 13 pF Typical Thermal Resistance per leg (Note 1) RJA RJL 62.5 25 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C 3.80 4.20 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Unit Symbol 05 RABS 1 RABS 2 RABS 4 RABS 6 RABS 8 RABS 10 Reverse Recovery Time (Note 4) trr 4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 150 0.8 0.5 Alldatasheet |
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