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EC732N60 Datasheet(PDF) 1 Page - E-CMOS Corporation

Part # EC732N60
Description  N-Channel Power MOSFET
Download  6 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC732N60 Datasheet(HTML) 1 Page - E-CMOS Corporation

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EC732N60
N-Channel Power MOSFET
C
o
n
v
e
r
t
e
r
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4G18N-Rev.F001
Features
◆ 600V, 2A, RDS(ON)(Max.) = 4.2 @VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
 Charger
 Standby Power.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Symbol
Parameter
Limit
Unit
TO-220F
TO-251
TO-252
VDS
Drain
– Source Voltage a
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous, TC =25 ℃
2
A
Drain Current-Continuous, TC =100 ℃
1.2
A
IDM
Drain Current-Pulsed
b
8
A
PD
Maximum Power Dissipation @ TJ =25 ℃
23
34
W
EAS
Single Pulsed Avalanche Energy
C
115
mJ
TJ, TSTG
Operating and Store Temperature Range
-55 to 150
℃
Thermal Characteristics
Symbol
Parameter
Value
Unit
Rθ JC
Thermal Resistance, Junction-Case Max.
5.56
3.7
℃ /W
Rθ JA
Thermal Resistance, Junction-Ambient Max.
120
110
℃ /W


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