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EC76P4KE11 Datasheet(PDF) 4 Page - E-CMOS Corporation

Part # EC76P4KE11
Description  Peak Pulse 400W Stand-off Voltage 6.8 to 550V
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC76P4KE11 Datasheet(HTML) 4 Page - E-CMOS Corporation

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EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
5A19N Rev.F001
Breakdown
voltage
V (BR) (Volts)
(1)
Device type
Min.
Max.
Test
current
at
IT (mA)
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID
(3) (uA)
Maximum
peak
pulse
current
IPPM
(2) (A)
Maximum
clamping
voltage
at IPPM
VC (Volts)
Maximum
temperature
coefficient
of VBR
(% /℃)
EC76P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
EC76P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
EC76P4KE530A
503.5
556.5
1.0
450
1.0
0.55
725
0.110
EC76P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
EC76P4KE550A
522.5
577.5
1.0
467
1.0
0.52
760
0.110
EC76P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
EC76P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
EC76P4KE530A
503.5
556.5
1.0
450
1.0
0.55
725
0.110
EC76P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
EC76P4KE550A
522.5
577.5
1.0
467
1.0
0.52
760
0.110
EC76P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
EC76P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
EC76P4KE530A
503.5
556.5
1.0
450
1.0
0.55
725
0.110
EC76P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
EC76P4KE550A
522.5
577.5
1.0
467
1.0
0.52
760
0.110
Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the VBR is +10%
Typical Performance Curves


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