NCR169DRLRM datasheet(2/8 Pages) ONSEMI

Part #	NCR169DRLRM

Description	General Purpose Sensitive Gate Silicon Controlled Rectifier

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NCR169D

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance – Junction to Case

– Junction to Ambient

RθJC

RθJA

75

200

°C/W

Lead Solder Temperature

(

t1/16″ from case, 10 secs max)

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or

Reverse Blocking Current (Note 1.)

TC = 25°C

(VD = Rated VDRM and VRRM; RGK = 1.0 kΩ)TC = 110°C

IDRM, IRRM

–

10

0.1

µA

mA

ON CHARACTERISTICS

Peak Forward On–State Voltage(*)

(ITM = 1.0 Amp Peak @ TA = 25°C)

VTM

–

1.7

Volts

Gate Trigger Current (Continuous dc) (Note 2.)

TC = 25°C

(VAK = 12 V, RL = 100 Ohms)

IGT

–

40

200

µA

Holding Current (Note 2.)

TC = 25°C

(VAK = 12 V, IGT = 0.5 mA)

TC = –40°C

IH

–

0.5

–

5.0

10

mA

Latch Current

TC = 25°C

(VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k)

TC = –40°C

IL

–

0.6

–

10

15

mA

Gate Trigger Voltage (Continuous dc) (Note 2.)

TC = 25°C

(VAK = 12 V, RL = 100 Ohms, IGT = 10 mA)

TC = –40°C

VGT

–

0.62

–

0.8

1.2

Volts

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage

(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,

TJ = 110°C)

dV/dt

20

35

–

V/

µs

Critical Rate of Rise of On–State Current

(IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA)

di/dt

–

50

A/

µs

*Indicates Pulse Test: Pulse Width

≤ 1.0 ms, Duty Cycle ≤ 1%.

1. RGK = 1000 Ohms included in measurement.

2. Does not include RGK in measurement.

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