Electronic Components Datasheet Search |
|
EC745N60AR Datasheet(PDF) 3 Page - E-CMOS Corporation |
|
EC745N60AR Datasheet(HTML) 3 Page - E-CMOS Corporation |
3 / 5 page EC745N60 600V,5A N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 4J06N-Rev.F001 IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 5 A ISM Miximum Pulsed Current VGS = 0V - - 20 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.5A - 0.81 1.5 V trr Reverse Recovery time VGS = 0V, IS = 5A, di/dt = 100A/μs - 310 - ns Qrr Reverse Recovery Charge - 2.1 - μC ■ Drain-Source Diode Characteristics Notes : a. TJ = +25 C to +150 C. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD= 5.0A di/dt≦ 100 A/μs, VDD≦ BVDSS, TJ ≦ +150 C. d. Pulse width≦ 300 μs; duty cycle≦ 2%. e. L=10mH, VDD =50V, IAS =5A, RG =25Ω Starting TJ =25 ℃. Square Pulse Duration (sec) For EC745N60AF Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration |
Similar Part No. - EC745N60AR |
|
Similar Description - EC745N60AR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |