NTD18N06L-1G datasheet(3/8 Pages) ONSEMI

Part #	NTD18N06L-1G

Description	Power MOSFET

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NTD18N06L

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3

0

0.06

30

20

0.04

0.02

0

10

0.1

0.12

40

0.08

2

1.6

1.2

1.4

1

0.8

0.6

1

1000

10000

04

20

2

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0

0.06

30

20

0.04

0.02

0

10

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

40

−50

50

25

0

−25

75

125

100

1.6

2.4

5.6

040

30

20

60

10

3

10

30

8 V

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VGS = 5 V

VGS = 10 V

150

175

VGS = 0 V

ID = 9 A

VGS = 5 V

0.1

0.12

VGS = 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

40

TJ = 150°C

TJ = 100°C

20

0

40

10

30

3.2

4

TJ = 25°C

TJ = −55°C

50

100

6 V

5 V

4.5 V

4 V

3.5 V

3 V

1.8

5.5 V

4.8

0.08

10

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NTD18N06L-1G Datasheet(PDF) 3 Page - ON Semiconductor

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