P6SMB9.1AT3 datasheet(2/8 Pages) ONSEMI

Part #	P6SMB9.1AT3

Description	600 Watt Peak Power Zener Transient Voltage Suppressors

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Manufacturer	ONSEMI [ON Semiconductor]

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Uni–Directional TVS

IPP

IF

V

I

IR

IT

VRWM

VC VBR

VF

P6SMB6.8AT3 Series

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2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms

PPK

600

W

DC Power Dissipation @ TL = 75°C

Measured Zero Lead Length (Note 2.)

Derate Above 75

°C

Thermal Resistance from Junction to Lead

PD

RqJL

3.0

40

25

W

mW/

°C

°C/W

DC Power Dissipation (Note 3.) @ TA = 25°C

Derate Above 25

°C

Thermal Resistance from Junction to Ambient

PD

RqJA

0.55

4.4

226

W

mW/

°C

°C/W

Forward Surge Current (Note 4.) @ TA = 25°C

IFSM

100

A

Operating and Storage Temperature Range

TJ, Tstg

–65 to +150

°C

1. 10 X 1000

ms, non–repetitive

2. 1

″ square copper pad, FR–4 board

3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @

IF (Note 4) = 30 A) (Note 5.)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

QVBR

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

5. 1/2 sine wave or equivalent, PW = 8.3 ms, non–repetitive

duty cycle

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