PBSS5240T datasheet(4/9 Pages) PHILIPS

Part #	PBSS5240T

Description	40 V, 2 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 9 page

2004 Jan 15

4

Philips Semiconductors

Product speciﬁcation

40 V, 2 A

PNP low VCEsat (BISS) transistor

PBSS5240T

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −30 V; IE =0

−−−100

nA

VCB = −30 V; IE = 0; Tj = 150 °C −−−50

µA

IBEO

emitter-base cut-off current

VEB = −4 V; IC =0

−−−100

nA

hFE

DC current gain

VCE = −2V

IC = −100 mA

300

450

−

IC = −500 mA

260

350

−

IC = −1 A

210

290

−

IC = −2 A

100

180

−

VCEsat

collector-emitter saturation voltage IC = −100 mA; IB = −1mA

−−55

−100

mV

IC = −500 mA; IB = −50 mA

−−70

−110

mV

IC = −750 mA; IB = −15 mA

−−140

−225

mV

IC = −1 A; IB = −50 mA

−−140

−225

mV

IC = −2 A; IB = −200 mA

−−240

−350

mV

RCEsat

equivalent on-resistance

IC = −500 mA; IB = −50 mA;

note 1

−

160

<220

m

Ω

VBEsat

base-emitter saturation voltage

IC = −2 A; IB = −200 mA

−−−1.1

V

VBE(on)

base-emitter turn-on voltage

VCE = −2 V; IC = −100 mA

−−−0.75

V

fT

transition frequency

IC = −100 mA; VCE = −10 V;

f = 100 MHz

100

200

−

MHz

Cc

collector capacitance

VCB = −10 V; IE =Ie =0;

f = 1 MHz

−

23

28

pF

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