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PBSS8110T Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBSS8110T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 2003 Dec 22 6 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 80 V; IE =0 −− 100 nA VCB = 80 V; IE = 0; Tj = 150 °C −− 50 µA ICES collector-emitter cut-off current VCE = 80 V; VBE =0 −− 100 nA IEBO emitter-base cut-off current VEB =4V; IC =0 −− 100 nA hFE DC current gain VCE = 10 V; IC =1mA 150 −− VCE = 10 V; IC = 250 mA 150 − 500 VCE = 10 V; IC = 500 mA; note 1 100 −− VCE = 10 V; IC = 1 A; note 1 80 −− VCEsat collector-emitter saturation voltage IC = 100 mA; IB =10mA −− 40 mV IC = 500 mA; IB =50mA −− 120 mV IC = 1 A; IB = 100 mA; note 1 −− 200 mV RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA; note 1 − 165 200 m Ω VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA −− 1.05 V VBEon base-emitter turn-on voltage VCE = 10 V; IC =1A −− 0.9 V fT transition frequency IC = 50 mA; VCE =10V; f = 100 MHz 100 −− MHz Cc collector capacitance VCB = 10 V; IE =Ie = 0; f = 1 MHz −− 7.5 pF |
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