PBSS8110T datasheet(6/12 Pages) PHILIPS

Part #	PBSS8110T

Description	100 V, 1 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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6 / 12 page

2003 Dec 22

6

Philips Semiconductors

Product speciﬁcation

100 V, 1 A

NPN low VCEsat (BISS) transistor

PBSS8110T

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 80 V; IE =0

−−

100

nA

VCB = 80 V; IE = 0; Tj = 150 °C

−−

50

µA

ICES

collector-emitter cut-off current

VCE = 80 V; VBE =0

−−

100

nA

IEBO

emitter-base cut-off current

VEB =4V; IC =0

−−

100

nA

hFE

DC current gain

VCE = 10 V; IC =1mA

150

−−

VCE = 10 V; IC = 250 mA

150

−

500

VCE = 10 V; IC = 500 mA; note 1

100

−−

VCE = 10 V; IC = 1 A; note 1

80

−−

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB =10mA

−−

40

mV

IC = 500 mA; IB =50mA

−−

120

mV

IC = 1 A; IB = 100 mA; note 1

−−

200

mV

RCEsat

equivalent on-resistance

IC = 1 A; IB = 100 mA; note 1

−

165

200

m

Ω

VBEsat

base-emitter saturation voltage

IC = 1 A; IB = 100 mA

−−

1.05

V

VBEon

base-emitter turn-on voltage

VCE = 10 V; IC =1A

−−

0.9

V

fT

transition frequency

IC = 50 mA; VCE =10V;

f = 100 MHz

100

−−

MHz

Cc

collector capacitance

VCB = 10 V; IE =Ie = 0; f = 1 MHz

−−

7.5

pF

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